172 nm & 222 nm UV Teeb Charged Particle Beam
Charged Particle Beams muab faib ua Ion Beams thiab Arc Electron Beams
1) Cov kab hluav taws xob muaj xws li cov khoom tsim los ntawm cov pa paug tawm thiab cov uas ua los ntawm cov khoom paug tawm
2) Arc electron beams suav nrog cov khoom tsim los ntawm cov pa tawm paug thiab cov khoom tsim tawm los ntawm cov khoom tawm
9.2 Ion kab teeb
9.2.1 Zog thiab teebmeem ntawm Ion Beams
1. Kev faib tawm ntawm Ion Beam Energy Range
Lub zog ntawm ion beams tau txais los ntawm kev nrawm hauv qhov siab -voltage hluav taws xob teb. Lub zog (E) muaj raws li hauv qab no: 1) Siab-zog ion beam, E=20-100 keV, siv rau ion beam implantation thiab ion beam mixing. 2) Nruab nrab-zog ion beam, E=500-1000 eV, siv rau am deposition, thiab beam deposition ua ntej-Bombardment tu ua ntej txheej. 3) Tsawg-zog ion beam, E Tsawg dua lossis sib npaug li 500 eV, siv rau kev pab cuam deposition thaum txheej txheej. Hauv qee qhov kev siv tshuaj kho qhov muag thiab tshuaj tua kab mob saum npoo, cov txheej txheem qis- lub zog ion beam pab tau kuj tuaj yeem ua ke nrog 222 nm UV teeb qhov muag kom txhim kho qhov huv thiab ua kom zoo dua.
2. Qhov cuam tshuam ntawm Ion Beams ntawm cov khoom nto
Ion kab teeb ntawm lub zog sib txawv ua rau muaj qhov sib txawv ntawm cov khoom siv [1−6]. (1) Ion beam implantation: ncaj qha implanting siab -zog ion beams rau hauv cov khoom nto tuaj yeem tsim cov ntaub ntawv tshiab uas tsis yog- sib npaug alloys, supersaturated solid solutions, metastable alloys thiab compounds, amorphous surfaces, and other organizational structures that is hard to get by pa method; Nws kuj tso cai rau ion beam recoil implantation thiab ion beam sib xyaw. (2) Ion beam sputtering: Siv high-zog ion beams los sputter lub hom phiaj cov ntaub ntawv kom tau high-cov yeeb yaj kiab purity. (3) Ion beam etching: Siv siab -zog ion beams kom tshem tawm cov khoom siv ntau dhau ntawm lub substrate, yog li tau txais cov qauv tsim los ntawm cov ntaub ntawv xav tau; Qhov no yog ib qho tseem ceeb technology rau etching Circuit Court boards nyob rau hauv lub semiconductor thiab optoelectronics industries. (4) Ion beam enhanced assisted deposition: Thaum lub sij hawm txheej txheej, siab -zog ion beams bombard lub workpiece ib txhij, piv txwv li, txheej ntawm ib sab thiab bombarding rau lwm yam. Lub ion beam muab lub zog rau cov khoom tso tawm, ua haujlwm ion beam pab txhim kho kev tso tawm, uas tuaj yeem ua rau cov txheej txheem sib xyaw ua ke raws li qhov sib piv ntawm stoichiometric thiab txhim kho cov qauv duab. Nyob rau hauv precision optical tivthaiv txheej, cov tshuab no qee zaum ua ke nrog 172 nm lub teeb rau hauv -situ nto ua kom muaj zog los txhim kho cov yeeb yaj kiab zoo.
Thaum lub sij hawm kev sib cuam tshuam ntawm ion beams thiab cov khoom nto, tag nrho cov phenomena muaj nyob, tab sis ib qho phenomenon dominates nyob rau hauv txawv zog ntau yam.
9.2.2 Ion Implantation
Ion implantation yog ib txoj hauv kev tseem ceeb rau kev hloov kho qhov chaw ntiav ntawm cov khoom siv siab -zog ion beams.
1. Hom Ion Implantation
Los ntawm txoj kev xav, ion implantation tuaj yeem muab faib ua: gas ion implantation, metal ion implantation, all -directional ion implantation, ion beam recoil implantation, and ion beam mixing [1−7].
2. Ion Implantation Tshuab
Daim duab 9-1 qhia cov qauv ntawm lub tshuab ion implantation. Qhov no yog ib tug loj-xaiv ion implantation tshuab [1].
Cov qauv ntawm Ion Implantation Tshuab
1- Cathode filament 2- Anode 3- Gas inlet 4- Electromagnetic coil 5- Ion source 6- Output chamber 7- Ion separator 8- Acceleration tube 9- Ion deflection system 10- Workpiece 11- Worktable 12- Fais fab 14 Protest-chamber High-voltage cheeb tsam 16- Control console 17- Saib qhov rais 18- Nqus system
(1) Tau txais siab - zog ions: Lub ion implantation qhov system qhia cov pa roj los yog hlau vapor rau hauv ionization chamber kom ionize nws mus rau hauv zoo ions, ces ceev cov ions zoo kom lawv siab tshaj tawm rau implantation rau hauv cov khib nyiab. (2) Kev sib xyaw ntawm lub tshuab ion implantation: Lub tshuab ion implantation muaj xws li ib qho chaw ion, kev soj ntsuam huab hwm coj, kev nrawm nrawm, thiab deflection scanning system . 1) Ion qhov chaw: ion qhov chaw yog qhov tseem ceeb tshaj plaws nyob rau hauv ion beam system. Nws lub luag haujlwm yog txhawm rau ionize atoms ntawm lub caij kom cog rau hauv ions. Rau cov roj ions (xws li N⁺, Ar⁺, H⁺), cov pa hluav taws xob ncaj qha nkag mus rau hauv chav tso tawm; rau cov hlau ions, cov hlau yog rhuab thiab evaporated, ces cov hlau vapor atoms yog nkag mus rau hauv cov pa paug chamber rau ionization kom tau hlau ions, uas yog ces muab rho tawm los ntawm cov paug chamber los ua ib tug ion beam nrog lub zog ntawm 20-500 keV. 2) Mass analysis system: Lub ion beam muab rho tawm los ntawm ob peb lub ntsiab lus, ion beam. Feem ntau, tsuas yog ib lub ntsiab lus ions xav tau rau kev cog qoob loo nyob ntawm daim ntawv thov. Lub ion separator yog cov ion loj tsom xam qhov system, uas cais cov ions xav tau los ntawm ntau cov kab teeb ion, coj lawv mus rau qhov chaw ua haujlwm thaum deflecting pliaj ions. Ib qho deflecting magnetic teb feem ntau yog siv, coj cov ions xaiv raws li deflection channel mus rau hauv lub hom phiaj chamber uas cov workpiece muab tso rau implantation. Tom qab qhov kev tshuaj ntsuam loj no, lwm cov ions raug lim tawm. 3) Kev nrawm nrawm: Ions tau nrawm dua hauv qab hluav taws xob ua haujlwm kom tau txais lub zog siab, feem ntau yog siv peb lub-theem rho tawm, nrog lub zog ion nrawm mus txog 20–500 keV. 4) Scanning system: Siab {{19}0} lub zog hluav taws xob nyob rau hauv 20V-energy "beam" duab ncaj nraim mus rau qhov chaw ua haujlwm, nrog rau qhov ua haujlwm me me ntawm qhov chaw. Muaj ob txoj hauv kev los xyuas kom meej qhov sib xws ntawm qhov siab -zog ion implantation: ib qho yog tig lub workpiece; lwm qhov yog los kho cov electromagnetic teb rau scanning, cia lub ion beam rov qab thiab uniformly luam theej duab cov qauv, nthuav cov kev hloov kho ntau yam ntawm cov khoom ua hauj lwm nto.
3. Txoj Cai ntawm Ion Implantation
Ion implantation yog cov txheej txheem ntawm ionizing ua ntej - xaiv cov khoom atoms rau hauv ions, ua kom lawv nrawm dua ntawm qhov hluav taws xob kom tau txais 20-500 keV zog, thiab tom qab ntawd qhia lawv mus rau hauv cov khoom txheej txheej. Nyob rau hauv txoj kev xav, tag nrho cov ntsiab lus nyob rau hauv lub periodic rooj yuav siv tau rau ion implantation [1−7].
Lub zog siab -ceev ions foob pob ntawm cov khoom nto, tsim cov kev sib tsoo cascade thiab yuam kom nkag mus rau cov khoom siv substrate mus rau qhov tob. Qhov tob implantation nyob ntawm cov ion loj, lub zog, thiab hom khoom hom, feem ntau xws li los ntawm ob peb nanometers mus rau pua pua nanometers, nrog rau cov txheej txheem implantation tiav nyob rau hauv kwv yees li 10⁻¹² s. Ntxiv nrog rau qhov nce qhov xwm txheej ntawm cov ntsiab lus ntawm qhov chaw, ion implantation kuj qhia txog ntau yam tsis xws luag xws li qhov chaw ua haujlwm, kev tsis sib haum xeeb, pawg tsis muaj, pawg dislocation, interstitial atoms, thiab interstitial atom pawg, cuam tshuam rau kev ua haujlwm ntawm cov txheej txheem implanted. Hauv lub tshuab nqus tsev kho qhov muag, lub hauv paus ntsiab lus zoo sib xws nrog 222 nm UV lub teeb tseem tuaj yeem siv rau kev pab tshawb nrhiav ntawm qhov tsis xws luag.
4. Hom Ion Implantation txheej txheem [1,2]
(1) Nruam implantation: Thaum lub sij hawm tsis tu ncua implantation, ions yog ceev mus rau 20-500 keV zog thiab tsis tu ncua implanted rau hauv cov khoom nto, ua ib tug loj tus naj npawb ntawm crystal defects nyob rau saum npoo, ho txhim kho corrosion kuj thiab hnav tsis kam. Ion beam zog feem ntau nyob ib ncig ntawm 60 keV, thiab cov nyhuv yog ntxiv txhim kho nrog lub zog hluav taws xob. (2) Recoil implantation: Recoil implantation yog thawj zaug tso ib zaj duab xis ntawm cov khoom tshiab B rau ntawm qhov chaw ua haujlwm substrate A, tom qab ntawd siv lub siab -zog roj ion beam (xws li Ar⁺ lossis N⁺) txhawm rau khob atoms ntawm cov khoom B rau hauv lub lattice ntawm lub substrate, tsim cov khoom tshiab A + B. Recoil implantation yuav tsum muaj zog ion beam ntau dua, ncav cuag 150 keV. (3) Ion beam sib xyaw [1]
Ion beam mixing: Ua ntej- tso cov khoom xav tau hloov pauv ntawm lub substrate los tsim cov txheej txheem nyias nyias (txhua txheej tuab los ntawm ob peb nanometers mus rau kaum nanometers), tom qab ntawd foob cov zaj duab xis nrog lub zog ions txhawm rau tshem tawm cov txheej txheem sib txawv, tig mus rau hauv cov txheej txheem atomic - qib sib tov, ntawm qhov sib xyaw ua ke tshiab. Kev sib xyaw ntawm ion beam tuaj yeem ua tiav ntawm ob - txheej xov xwm lossis ntau txheej hlau zaj duab xis: Piv txwv li: Kev sib xyaw ntawm cov yeeb yaj kiab hlau thiab substrate; nyob rau hauv kev sib xyaw ua ke, qhov sib txuas ntawm qhov sib txuas ohmic sib txuas siv ib qho - txheej hlau - substrate mixing form. Tom qab ion beam sib tov, silicide forms ntawm lub interface, txo ohmic tiv thaiv.
Multilayer metal film ion beam mixing: Ion beam mixing in multilayer films npaj los ntawm ob - txheej hlau tshuab yog multilayer zaj duab xis ion beam mixing, siv los kawm alloy theem transformations ntawm ob hlau. Lub substrate tuaj yeem yog hlau, ceramic, lossis insulator.
Dynamic mixing technology: Deposition thiab implantation tshwm sim ib txhij, feem ntau hu ua ion beam enhanced deposition technology. Nyob ntawm lub zog, lub zog ions tau muab faib ua siab -zog ions (MeV xaj) thiab qis- zog ions (hauv qab keV xaj). High-zog ion beams yuav tsum tau ion accelerators thiab yooj yim ua rau ntau yam tsis xws luag nyob rau hauv lub substrate nto txheej, yooj yim khob tawm ntau deposit atoms thiab zoo heev txo tus nqi deposition. Tsawg-zog ion beams muaj qhov cuam tshuam zoo dua, yog li ion beam txhim kho qhov tso tawm feem ntau siv qis-zog ion beam foob pob. Lub zog ion beam bombardment ntawm zaj duab xis nto induces ntau physicochemical teebmeem uas decisively cuam tshuam rau zaj duab xis tus qauv thiab lub koom haum. Hauv qee qhov kev siv lub tshuab nqus tsev ultraviolet, 172 nm lub teeb tuaj yeem ua lub teeb pom kev zoo los txhim kho qhov chaw huv si thaum sib xyaw ua ke.
Daim duab 9-2 Ion beam mixing process: a) Deposited film layer b) Ion implantation c) Ion beam mixing ○- Substrate atoms ●- Zaj duab xis txheej atoms ●- Ions
5. Qhov zoo ntawm Ion Implantation Technology
Hauv cov ntsiab lus, qhov zoo ntawm kev cog cov ions nrog 20-500 keV lub zog rau hauv cov khoom siv tuaj yeem raug sau tseg raws li hauv qab no:
ion implantation txheej txheem muaj ion metallurgical teebmeem, nrog implanted txheej muaj pes tsawg leeg tsis txwv los ntawm thermodynamic equilibrium.
Tswj implanted ion koob tshuaj kom ua tiav cov khoom uas xav tau.
Tsawg substrate kub nce thaum implantation.
Tsis muaj kev hloov pauv ntawm qhov workpiece qhov ntev lossis qhov chaw roughness thaum cog.
Cov khoom cog tau muab faus rau hauv cov txheej txheem cog, yog li cov txheej txheem hloov kho saum npoo tsis tev zoo li txheej txheej.
Implanted ions tuaj yeem nkag mus rau cov txheej txheem uas twb muaj lawm, oxide barrier txheej, lossis txheej txheej thermal barrier.
Zuag qhia tag nrho substrate kev ua tau zoo tsis cuam tshuam.
Implanted cov ntsiab lus txwv rau cov txheej txheej saum npoo, ua tiav cov txiaj ntsig zoo ib yam li cov khoom siv ntau alloying thaum txuag cov ntaub ntawv kim thiab cov tswv yim los ntawm kev hloov kho saum npoo nkaus xwb.
Ion implantation technology yog dav siv nyob rau hauv aerospace, mechanical manufacturing, biomedicine, electronics kev lag luam, thiab lwm yam kev lag luam los txhim kho cov khoom hnav tsis kam, corrosion kuj, oxidation tsis kam, qaug zog tiv thaiv, thiab cov khoom tshwj xeeb (xws li superconductivity, magnetic optical khoom). Hauv kev tshawb fawb metallurgical, ion implantation leverages nws cov atomic metallurgy qhov zoo los kawm cov txheej txheem hloov pauv, tsim cov theem tshiab, thiab tshawb xyuas lub luag haujlwm metallurgical ntawm ntau lub ntsiab lus hauv cov ntaub ntawv ceramic, cov ntaub ntawv superhard, thiab lwm yam.
9.2.3 Ion Beam Sputtering Deposition thiab Ion Beam Etching
Nruab nrab-zog ion beams nrog lub zog ntawm 500-1000 eV feem ntau yog siv rau ion beam sputtering deposition thiab ion beam etching [1−5].
1. Ion Beam Sputtering Deposition
Nruab nrab-zog ion beams bombard cov khoom nto; Lub zog ion tiv thaiv kev nkag mus rau hauv cov khoom siv lattice tab sis hloov lub zog rau lub hom phiaj atoms, ua rau sputtering qhov chaw uas lawv ya tawm ntawm qhov chaw thiab tso rau ntawm lub workpiece los ua cov yeeb yaj kiab nyias. Txij li thaum sputtering yog induced los ntawm ion beams, sputtered zaj duab xis atoms muaj lub zog siab, thiab nyob rau hauv lub tshuab nqus tsev siab nrog ion beam bombardment ntawm lub hom phiaj, zaj duab xis purity yog siab, enabling deposition ntawm siab - zoo films nrog txhim kho stability, ua tau zoo optical thiab txhua yam khoom. Hauv kev npaj cov yeeb yaj kiab kho qhov muag, cov txheej txheem no feem ntau ua ke nrog 222 nm UV teeb rau hauv -situ tu hauv lub tshuab nqus tsev chamber, kom ntseeg tau siab purity thaum lub sij hawm sputtering. Lub hom phiaj ntawm ion beam sputtering yog tsim cov ntaub ntawv tshiab nyias nyias.
2. Ion Beam Etching
Ion beam etching kuj tseem siv nruab nrab -zog ion beams los foob cov khoom nto rau sputtering, ua etching ntawm substrate; Nws yog ib qho tseem ceeb thev naus laus zis rau kev ua qauv hauv cov khoom siv semiconductor, cov khoom siv optoelectronic, thiab lwm yam. Nyob rau hauv semiconductor integrated circuit chip npaj, tsheej lab ntawm cov transistors yog fabricated rau ib tug -crystal silicon wafer nrog txoj kab uas hla Φ12 nyob rau hauv (Φ304.8 mm). Txhua lub transistor yog tsim los ntawm ntau cov txheej txheem ntawm cov yeeb yaj kiab uas muaj cov haujlwm sib txawv, suav nrog cov txheej txheem ua haujlwm, cov txheej txheem rwb thaiv tsev, cov txheej txheem kev sib cais, cov txheej txheem ua haujlwm, thiab lwm yam. Txhua txheej txheej txheem muaj nws tus qauv, yog li tom qab tso tawm txhua qhov ua haujlwm nyias zaj duab xis, ion beam etching tshem tawm qhov tsis muaj txiaj ntsig, khaws cov khoom siv zaj duab xis. Tam sim no nti hlau dav ncav cuag 7 nm, yuav tsum tau ion beam etching rau cov qauv zoo. Piv rau thawj zaug ntub etching, ion beam etching yog qhuav etching nrog siab precision. Nyob rau hauv lub tshuab nqus tsev ultraviolet optical ntaus ntawv ua, 172 nm lub teeb yog qee zaum siv rau kev kho qhov chaw ua ntej ua ntej etching.
Ion beam etching thev naus laus zis suav nrog tsis yog-reactive ion beam etching thiab reactive ion beam etching. Cov qub siv argon ion beams rau lub cev cov tshuaj tiv thaiv etching; tom kawg siv fluorine ion beams rau sputtering, qhov ntxiv rau siab -zog sputtering, fluorine ion beams react chemically nrog etched films xws li SiO₂, Si₃N₄, GaAs, W, thiab lwm yam., uas muaj ob qho tib si lub cev thiab tshuaj cov txheej txheem kom sai etching tus nqi. Reactive etching siv corrosive gases xws li CF₄, C₂F₆, CCl₄, BCl₃, tsim byproducts SiF₄, SiCl₄, GeCl₄, WF₆, uas yog corrosive gases raug tshem tawm. Ion beam etching thev naus laus zis yog qhov tseem ceeb rau kev tsim khoom siab -tech.
